Structural properties of binary semiconductors
نویسندگان
چکیده
Using the plasma oscillations theory of solids, 2 empirical relations have been proposed for the calculation of the structural properties such as bond-stretching central force constant (α) and bondbending non-central force constant (β) for II-VI and III-V group binary semiconductors. We find that α =D (ћωp) 2 and β = S (ћωp) 2 , where D and S are constants. The numerical values of D and S are respectively, 0.151 and 0.016 for II-VI and 0.177 and 0.031 for III-V group binary semiconductors. The structural properties of binary semiconductors exhibit a linear relationship when plotted on a log-log scale against the plasmon energy ћωp (in eV), which lies on the straight lines. We have applied the proposed empirical relations on these binary semiconductors and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers.
منابع مشابه
Investigation of HF/H2O2 Concentration Effect on Structural and Antireflection Properties of Porous Silicon Prepared by Metal-Assisted Chemical Etching Process for Photovoltaic Applications
Porous silicon was successfully prepared using metal-assisted chemical etching method. The Effect of HF/H2O2 concentration in etching solution as an affecting parameter on the prepared porosity type and size was investigated. Field emission electron microscopy (FE-SEM) confirmed that all etched samples had porous structure and the sample which was immersed into HF/H2O2 withmolar ratio of 7/3.53...
متن کاملRealistic models of binary glasses from models of tetrahedral amorphous semiconductors
We present an approach for modeling binary glasses beginning with models of tetrahedral amorphous semiconductors and report models of glassy GeSe2 , SiSe2 , SiO2, and GeSe4. The topology of our models are analyzed through partial pair correlations and static structure factors. Structural properties, including the first sharp diffraction peak, electronic and vibrational properties are all in agr...
متن کاملStudy of the effect of chemical reduction agent on the synthesis and structural properties of WO3-TeO2 and MoO3-TeO2 two-dimensional compounds.
Preparation of two-dimensional nanostructures of WTe2 and MoTe2 by chemical solution synthesis methods is of great importance. In different synthesis methods, different precursors and concentrations are used. In this paper, we used the chemical reduction reaction method from solution for our analysis. Binary compounds of WO3 - TeO2 and MoO3 - TeO2 were prepared in two processes with reduction a...
متن کاملStructural and electrical properties of In-doped vanadium oxide thin films prepared by spray pyrolysis
The In-doped vanadium pentoxide nanostructures with different doping levels including 0, 10, 20 and 30 at.% were prepared by the spray pyrolysis technique. The prepared thin films were characterized by the x-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results revealed that the films were crystalline in tetragonal phase. Increasing the In-doping level made the structure...
متن کاملUltraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations
In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...
متن کامل